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The Linear Systems family of high speed DMOS switches is designed to handle a wide range of video, fast ATE, telecom and other analog switching applications. DMOS High Speed Switches The Linear Systems family of DMOS devices is designed to handle a wide range of video, fast ATE, telecom and other analog switching applications. These components are capable of ultrafast switching speeds (tr = 1 ns, tOFF = 3 ns) and excellent transient response. Thanks to reduced parasitic capacitances, our DMOS can handle wideband signals with high off-isolation and minimum crosstalk. SD/SST210 Series SD/SST210 SINGLE, HIGH SPEED N-CHANNEL LATERAL DMOS FET SWITCH Read More SD/SST211 Series SD211DE SINGLE, HIGH-SPEED N-CHANNEL LATERAL DMOS FET SWITCH Read More SD5000 Series SD5000 SERIES QUAD, HIGH SPEED N-CHANNEL, LATERAL DMOS FET SWITCH Read More

< Back Military Sensors White Paper Linear Systems Mar 17, 2023 Linear Systems' White Paper Describes Lowest Noise Amplification for Sensor Signal Chains FREMONT, Calif., May 27, 2021 /PRNewswire/ -- Linear Systems, a world class producer of ultra low noise JFETS and semiconductors, has released an application note on creating low-noise signal chains for military sensors. The paper, "Military Higher-Performance Sensor Signal Chains," offers engineers solutions using ultra-low-noise discrete components added to an IC-based circuit to produce the better-performing signal chains in sensitive applications. Included are key applications with reference designs such as: Piezoelectric Element Preamps; Hydrophones; Accelerometers; Photodiode Preamps; and other types of sensors where discrete components are uniquely capable of performing critical initial amplification of sensor signals. "Better sensor systems enable earlier threat detection and more effective countermeasures, " Mr. Tim McCune said. "Our ultra-low-noise JFETS enable designers to build more sensitivity and capability into their sensor systems. This improved capability translates directly into greater value to the end users of these sensors." Linear Systems is a designer, manufacturer and seller of precision, high-performance, small-signal discrete semiconductors. A Silicon Valley company founded in 1987, it produces ultra-low-noise, monolithic dual and single JFETs and bipolar transistors, along with high-speed DMOS switches, small-signal MOSFETs, ultra-low leakage diodes and BiFET amplifiers. These parts have been designed into world-class products in the areas of: Test & Measurement, Audio, Scientific Optical, Military Sensor; Industrial Controls; and Hybrids. The White Paper can be downloaded at: High-Performance Military Sensor Signal Chains Data sheets, applications notes, SPICE models and other information can be downloaded at www.linearsystems.com . For More Information: Call Linear Systems toll free phone number: (800) 359-4023, regular business line: (510) 490-9160 or fax: (510) 353-0261. Email: sales@linearsystems.com Website: www.linearsystems.com SOURCE Linear Integrated Systems

Linear Systems designs and manufactures the highest-performance line of monolithic dual JFETs in the industry. Contact us for a quote! Back 2N/LS5905 Series LOW-LEAKAGE, LOW-DRIFT, MONOLITHIC DUAL, N-CHANNEL JFET AMPLIFIER The 2N/LS5905 Series Low Leakage, Low Drift, Monolithic Dual N-Channel JFET Amplifier features tight matching and low drift over temperature specifications. The series is targeted for use in a wide range of precision instrumentation applications where tight tracking is required. Linear Systems’ version of this part series is a direct, pin-for-pin replacement of the Intersil part. Available in the TO-78 7L RoHS and SOIC 8L RoHS package, as well as bare die. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: LS5905 TO-78 7L RoHS LS5906 TO-78 7L RoHS LS5907 TO-78 7L RoHS LS5908 TO-78 7L RoHS LS5909 TO-78 7L RoHS 2N5905 TO-78 7L RoHS 2N5906 TO-78 7L RoHS 2N5907 TO-78 7L RoHS 2N5908 TO-78 7L RoHS 2N5909 TO-78 7L RoHS LS5905 SOIC 8L RoHS LS5906 SOIC 8L RoHS LS5907 SOIC 8L RoHS LS5908 SOIC 8L RoHS LS5909 SOIC 8L RoHS Datasheet Spice Model Application Notes

TIGHT MATCHING, MONOLITHIC DUAL, PNP TRANSISTOR < Back LS350 Series TIGHT MATCHING, MONOLITHIC DUAL, PNP TRANSISTOR The LS350 Series, Tight Matching, Monolithic Dual, PNP Transistor is a direct replacement for the Analog Devices MAT series and Micro Power Systems MP350, MP351, and MP352 Series. It is ideal for Tight Matching, Small Signal, Transistors Amplifier & Switching Applications. It is available the in TO-71 6L, TO-78 6L, PDIP 8L, SOIC 8L, SOT-23 6L and DFN 8L package, as well as bare die. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: LS350 TO-71 6L RoHS LS351 TO-71 6L RoHS LS352 TO-71 6L RoHS LS350 TO-78 6L RoHS LS351 TO-78 6L RoHS LS352 TO-78 6L RoHS LS350 PDIP 8L RoHS LS351 PDIP 8L RoHS LS352 PDIP 8L RoHS LS350 SOIC 8L RoHS LS351 SOIC 8L RoHS LS352 SOIC 8L RoHS LS350 SOT-23 6L RoHS LS351 SOT-23 6L RoHS LS352 SOT-23 6L RoHS 351 DFN 8L RoHS 352 DFN 8L RoHS 353 DFN 8L RoHS LS350 Die LS351 Die LS352 Die Datasheet Spice Model Application Notes

< Back 3N163 App Note Introduction Wireless real-time radiation sensors networks offer the general public and those that work in high radiation areas greater protection against radiation hazards. Combined with real-time localized and global heat mapping of radiation levels, these radiation networks will help give government and environmental agencies the ability to understand the radiation landscape and respond quickly to radiation changes before they become life-threatening. Low-cost, low-power and no-power radiation sensors, also known as RADFETs (radiation field effect transistors) or dosimeters, are necessary for the implementation of these networks. The RADFET is unique because it does not need a power source to detect radiation. It is also unique in that it records the amount of actual radiation exposure and, as a non-volatile analog memory device, stores the level of radiation exposure as a change in threshold voltage. RADFETs are relatively simple circuits, consisting of only a PMOS transistor. The LS 3N163 PMOS (P-Channel) MOSFET transistor can be used to design RADFETs to meet different design requirements like cost, sensitivity, linearity, and power. The ability to optimize a RADFET for these different design requirements give network designers the ability to construct wireless radiation sensor networks that can also be optimized for cost and performance on a wide scale. Radiation detector principles PMOS MOSFET radiation detectors work on the principle that electron-hole pairs form when radiation or an ionizing particle strikes the MOSFET. This in turn results in shifts to the threshold voltage and drain current parameters of the MOSFET device. Because the change in threshold voltage with radiation exposure is highly linear in a PMOS device, PMOS devices such as the LS 3N163 are commonly used as a radiation detector. In a typical application, the LS 3N163 is operated in unbiased mode (no-power mode) and exposed to radiation. The change in threshold voltage is then measured and the corresponding radiation exposure level determined. In another application, where higher levels of sensitivity are needed, the LS 3N163 is operated in biased mode (power mode). Read More

< Back FETching Discrete Amplifier Introduction Low-noise amplifiers for photodiode, piezoelectric, and other instrumentation applications typically call for circuit parameters such as extremely high input impedance, low 1/f noise, or subpicoamp bias currents that cannot be met with available integrated products. This article discusses the requirements and challenges of designing a low-noise amplifier using discrete components, with particular emphasis on input-referred noise and offset voltage trimming. Read More

MONOLITHIC DUAL, PICO AMP LOW LEAKAGE DIODES < Back ID100 Series ID100 SERIES MONOLITHIC DUAL, PICO AMP LOW LEAKAGE DIODES The ID100 Series Monolithic Dual, Pico Amp Low Leakage Diodes is a direct replacement for the Intersil part series. It is ideal for Pico Amp, Ultra Low Leakage, Protection Diode Applications. The part series is available in the TO-71 6L RoHS and TO-78 6L RoHS package, as well as in die form. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: ID100 TO-71 6L RoHS ID101 TO-78 6L RoHS ID100 TO-71 6L RoHS ID101 TO-78 6L RoHS Datasheet Spice Model Application Notes

< Back What is a JFET? Linear Systems May 30, 2024 JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers. Linear Systems JFET (Junction Field-Effect Transistor) amplifiers are known for their exceptional performance in low-noise, high-input impedance applications. These amplifiers are particularly valued in audio, instrumentation, and signal processing systems due to their ability to amplify weak signals without adding significant noise. Dual JFET amplifiers incorporate two JFETs in a single package, which offers matched characteristics and improved thermal stability. This configuration enhances the performance and reliability of circuits that require closely matched transistors, simplifying the design and reducing component count. Such amplifiers find extensive use in differential amplifiers and other precision analog circuits, making them indispensable in high-fidelity audio equipment and sensitive measurement devices. JFET Basics JFETs are three-terminal semiconductor devices with a gate, source, and drain. They belong to the family of field-effect transistors (FETs), where the flow of current is controlled by an electric field applied to the device's gate terminal. In contrast to bipolar junction transistors (BJTs), which use a current-controlled base to control the collector-emitter current, JFETs utilize a voltage-controlled gate to regulate the source-drain current. This fundamental difference is what makes JFETs superior in high-impedance applications as they draw very little gate current, resulting in minimal loading and noise contributions. Common Source Amplifier The most widely used configuration for amplifying signals using a JFET is the common source (CS) amplifier. As the name suggests, the input signal is applied at the device's gate terminal and amplified output is obtained at its drain. The source terminal is common to both input and output circuits, hence the name. The CS amplifier offers high voltage gain, excellent linearity and good frequency response over a wide range. It also provides high input impedance and low output impedance, making it suitable for driving loads with varying impedances. Advantages of JFETs High Input Impedance: Because the gate is isolated from the source-drain path by a reverse-biased PN junction, JFETs have very high input impedance compared to BJTs or MOSFETs. This allows them to be used in high-impedance circuits without causing significant loading effects. Low Noise: Due to their low gate current and minimal internal resistance, JFETs exhibit very low noise performance, making them ideal for use in sensitive audio equipment and measurement devices. Good Linearity: The transconductance (gm) of a JFET is relatively constant over a wide range of input voltages, resulting in good linearity and low distortion compared to BJTs or MOSFETs. Simple Biasing: Unlike BJTs which require precise base biasing and MOSFETs which need complex circuitry for gate biasing, JFETs can be easily biased using a simple resistor or potentiometer. Reverse Bias Protection: The reverse-biased PN junction in the JFET acts as a natural diode, providing reverse bias protection and preventing damage to the device if the input voltage exceeds the specified limit. Applications of JFETs JFETs find applications in various electronic circuits such as: Low-Noise Amplifiers: Due to their low noise performance, JFETs are commonly used in audio amplifiers, radio receivers, and other sensitive applications where noise can be a major issue. Switching Circuits: JFETs can be used as simple on-off switches by connecting the gate to ground (for N-channel) or to the supply voltage (for P-channel) to control the flow of current between source and drain. Voltage-controlled Resistors : By varying the gate voltage, a JFET can be used as a variable resistor in circuits such as oscillators and filters. Sample-and-Hold Circuits: The high input impedance of JFETs makes them suitable for use in sample-and-hold circuits where the input voltage needs to be held constant for a short period of time. Constant Current Sources: JFETs can also be used as simple constant current sources, where the output current remains nearly constant despite changes in input voltage or load resistance. Other applications include use in high-frequency circuits, chopper amplifiers, and instrumentation equipment. With advancements in technology, JFETs are being increasingly replaced by other types of transistors such as MOSFETs. However, they still hold importance in certain specialized applications due to their unique characteristics and simplicity in biasing and operation. Conclusion JFETs are versatile electronic devices with numerous advantages over other types of transistors. These include high input impedance, low noise performance, and simplicity in biasing. They find widespread use in various applications such as amplifiers, switching circuits, voltage-controlled resistors, sample-and-hold circuits, and constant current sources. Despite being gradually replaced by other transistor types, JFETs still hold importance in certain specialized applications and continue to be an essential component in the field of electronics. With ongoing research and development, we can expect to see further advancements and improvements in JFET technology. These small but powerful devices will continue to play a significant role in shaping the electronic industry. So, it is important for any electronics enthusiast or professional to have a thorough understanding of the working principles and applications of JFETs in order to utilize them effectively in their circuit designs. With their versatile characteristics and unique advantages, JFETs have undoubtedly played a crucial role in the development of modern electronic systems and will continue to do so in the future. So next time you come across a JFET, remember their importance and versatility in the world of electronics.

< Back App Note by Dimitri Danyuk Linear Systems Mar 17, 2023 Headphone Amplifier Evaluation Board Linear Integrated Systems headphone amplifier evaluation board is a complete, low-power stereo audio amplifier for high-fidelity line-level output and headphone applications. It consists of Linear Integrated Systems JFETs along with a number of other parts mounted on a circuit board. Linear Integrated Systems headphone amplifier evaluation board includes the following features: Stereo, single ended input and single ended output 400 mW output power into 100Ω Wide frequency response (10Hz?200kHz; ?1dB) Voltage gain 5 (14dB) Low distortion (THD+N is less than 1% at 10Hz?20kHz at 5Vrms into 100Ω and less than 0.1% from 10 Hz to 20 kHz at 1Vrms into 100Ω load) Short circuit protection Pop reduction (slow start) circuit Defeatable cross feed circuit Volume control Overvoltage and reverse polarity power protection Audio input and output connections: left and right RCA phono jack inputs, ¼” stereo phone jack output External 9V–16V supply input External power supply connector: power jack, inside diameter 2.1mm, outside diameter 5.5mm

LOG CONFORMANCE, MONOLITHIC DUAL, PNP TRANSISTOR < Back LS358 LOG CONFORMANCE, MONOLITHIC DUAL, PNP TRANSISTOR Previous Next

SINGLE, ULTRA-LOW NOISE, P-CHANNEL JFET AMPLIFIER < Back LSJ/SST74 Series SINGLE, ULTRA-LOW NOISE, P-CHANNEL JFET AMPLIFIER The LSJ/SST74 Single, Ultra-Low noise, P-Channel JFET Amplifier is a direct replacement for the Toshiba 2SJ74. It is ideal for Ultra-Low Noise Audio/Acoustic Applications. Available in the TO-92 3L RoHS, SOT-89 3L RoHS, as well as in die form. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information: Below are the options you have when ordering this part series: LSJ74A TO-92 3L RoHS LSJ74B TO-92 3L RoHS LSJ74C TO-92 3L RoHS LSJ74D TO-92 3L RoHS SST74A SOT-23 3L RoHS SST74B SOT-23 3L RoHS SST74C SOT-23 3L RoHS SST74D SOT-23 3L RoHS Datasheet Spice Model Application Notes

< Back Burning Amp Festival Linear Systems Mar 17, 2023 Burning Amp Festival - A DIY Audio Gathering Burning Amp Festival Every year Linear Systems sponsors one of the audio industry’s best-regarded DIY amplifier design, display and discussion events, Burning Amp Festival. Here audio enthusiasts enjoy sharing their displays and demonstrations of incredible audio projects, and talk-shop with renowned industry leaders. Speakers such as audio legend Nelson Pass, take the stage to discuss recent projects and engage with the crowd in a Q&A session. It’s no wonder Burning Amp continually attracts audio DIYers from around the world! Burning Amp typically takes place in late October/early November. In past years the event has been held at various locations throughout the Bay Area, such as Fort Mason in San Francisco, CA. Due to COVID-19, this year’s event is cancelled, but we look forward with great anticipation to the Burning Amp Festival 2021.Interested in presentations from past years speakers? Visit our YouTube Channel: www.youtube.com/user/LinearSystemsUSA