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SINGLE, N-CHANNEL ENHANCEMENT MODE MOSFET < Back 3N170 Series SINGLE, N-CHANNEL ENHANCEMENT MODE MOSFET The 3N170 Series Single, N-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay equivalent part. It is ideal for Amplifier and Switching Applications. The part series is available in the TO-72 4L RoHS and SOT-143 4L RoHS package, as well bare die. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: 3N170 TO-72 4L RoHS 3N171 TO-72 4L RoHS 3N170 SOT-143 4L RoHS 3N171 SOT-143 4L RoHS Datasheet Spice Model Application Notes

Discover an extensive array of application notes and white papers authored by the talented minds at Linear Systems, as well as contributions from our esteemed colleagues and friends. Immerse yourself in our carefully curated selection to stay informed and inspired. Articles & Books This is a space to tell users about yourself and your business. Let them know who you are, what you do, and what this website is all about. Double click to start editing. Articles FET Principles and Circuits, Part 1 to 4, by Ray Martson, Nuts and Volt 5/2000 Ray Marston Read More JFETs The New Frontier Part 1 Erno Borbely Read More Books Designing with Field Effect Transistors (Second Edition) 1990 ISBN 007057537-1 FET Technology and Applications 1989 ISBN 0824780507 View Read More Analog Circuit Design - A Tutorial Guide to Applications and Solution Analog Circuit Design, Volume 2 – Immersion in the Black Art of Analog Design Analog Circuit Design, Volume 3 – Design Note Collection View Read More An Introduction to Field Effect Transistors-by J. Watson PHD, University of Wales, Swansea-1970 Designing with Field Effect Transistors (First Edition) 1981 ISBN 9780070574496 View Read More Some Tips on Making a FETching Discrete Amplifier View Read More Designing Audio Power Amps, 2010, ISBN 007164024X The Audio Power Amplifier Design Handbook (Fifth Edition) View Read More Designing Audio Power Amps, 2010, ISBN 007164024X View Read More Piezoelectric Accelerometers with Integral Electronics includes noise analysis of JFET and MOSFET amplifier circuits ISBN 978-331908-0772 View Read More

HIGH VOLTAGE, SUPER BETA, MONOLITHIC DUAL, NPN TRANSISTOR < Back LS301 Series HIGH VOLTAGE, SUPER BETA, MONOLITHIC DUAL, NPN TRANSISTOR Previous Next

MONOLITHIC DUAL, P-CHANNEL ENHANCEMENT MODE MOSFET < Back 3N165 Series MONOLITHIC DUAL, P-CHANNEL ENHANCEMENT MODE MOSFET The 3N165 Series Monolithic Dual, P-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay part. It is ideal for Amplifier and switching Applications. This part series is available in the Available in the TO-99 8L RoHS and SOIC 8L RoHS package, as well as bare die. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: 3N165 TO-99 8L RoHS 3N166 TO-99 8L RoHS 3N165 SOIC 8L RoHS 3N1646 SOIC 8L RoHS 3N163 Die 3N164 Die Datasheet Spice Model Application Notes

SINGLE, HIGH FREQUENCY, N-CHANNEL JFET AMPLIFIER < Back J/SST/U308 Series SINGLE, HIGH FREQUENCY, N-CHANNEL JFET AMPLIFIER The J/SST/U308 Series Single, High Frequency, N-Channel JFET Amplifier is a direct replacement for the Fairchild, NXP and Siliconix-Vishay equivalent part. It is ideal for High Frequency Applications. The series is available in the TO-92 3L RoHS, TO-18 3L RoHS and SOT-23 3L RoHS package, as well as in die form. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information: Below are the options you have when ordering this part series: J308 TO-92 3L RoHS J309 TO-92 3L RoHS J310 TO-92 3L RoHS U308 TO-18 3L RoHS U309 TO-18 3L RoHS U310 TO-18 3L RoHS SST308 SOT-23 3L RoHS SST309 SOT-23 3L RoHS SST310 SOT-23 3L RoHS U308 Die U309 Die U310 Die Datasheet Spice Model Application Notes

Linear Systems designs and manufactures the highest-performance line of monolithic dual JFETs in the industry. Contact us for a quote! Back SST/U421 Series LOW LEAKAGE, LOW DRIFT, MONOLITHIC DUAL, N-CHANNEL JFET The SST/U421 Series Low-Noise, Low-Drift, Monolithic Dual N-Channel JFET Amplifier is designed for a broad spectrum of precision instrumentation and sensor applications. This series is offered in TO-71 6L, TO-78 7L, PDIP 8L, and SOIC 8L RoHS-compliant packages, as well as in die form. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information The following options are available for ordering this part series: U421 TO-71 6L RoHS U422 TO-71 6L RoHS U423 TO-71 6L RoHS U424 TO-71 6L RoHS U425 TO-71 6L RoHS U426 TO-71 6L RoHS U421 TO-78 7L RoHS U422 TO-78 7L RoHS U423 TO-78 7L RoHS U424 TO-78 7L RoHS U425 TO-78 7L RoHS U426 TO-78 7L RoHS SST421 SOIC 8L RoHS SST422 SOIC 8L RoHS SST423 SOIC 8L RoHS SST424 SOIC 8L RoHS SST425 SOIC 8L RoHS SST426 SOIC 8L RoHS U421 Die U422 Die U423 Die U424 Die U425 Die U426 Die Datasheet Spice Model Application Notes

SINGLE, LOW LEAKAGE PICO-AMP DIODES < Back J/SST/PAD Series SINGLE, LOW LEAKAGE PICO-AMP DIODES The PAD Series Ultra-Low Leakage, Protection Diode is a direct replacement for the Siliconix-Vishay part series. It is ideal for Pico Amp, Ultra-Low Leakage, Protection Diode Applications. This part series is available in the TO-72 3L RoHS, TO-92 2L RoHS and SOT-23 3L RoHS package, as well as die form. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: PAD1 TO-72 3L RoHS PAD2 TO-72 3L RoHS PAD5 TO-72 3L RoHS PAD10 TO-72 3L RoHS PAD20 TO-72 3L RoHS PAD50 TO-72 3L RoHS PAD100 TO-72 3L RoHS JPAD1 TO-92 2L RoHS JPAD2 TO-92 2L RoHS JPAD5 TO-92 2L RoHS JPAD10 TO-92 2L RoHS JPAD20 TO-92 2L RoHS JPAD50 TO-92 2L RoHS JPAD100 TO-92 2L RoHS SSTPAD1 SOT-23 3L RoHS SSTPAD2 SOT-23 3L RoHS SSTPAD5 SOT-23 3L RoHS SSTPAD10 SOT-23 3L RoHS SSTPAD20 SOT-23 3L RoHS SSTPAD50 SOT-23 3L RoHS SSTPAD100 SOT-23 3L RoHS PAD1 Die PAD2 Die PAD5 Die PAD10 Die PAD20 Die PAD50 Die PAD100 Die Datasheet Spice Model Application Notes

Linear Systems designs and manufactures the highest-performance line of monolithic dual JFETs in the industry. Contact us for a quote! Back 2N/LS5905 Series LOW-LEAKAGE, LOW-DRIFT, MONOLITHIC DUAL, N-CHANNEL JFET AMPLIFIER The 2N/LS5905 Series Low Leakage, Low Drift, Monolithic Dual N-Channel JFET Amplifier features tight matching and low drift over temperature specifications. The series is targeted for use in a wide range of precision instrumentation applications where tight tracking is required. Linear Systems’ version of this part series is a direct, pin-for-pin replacement of the Intersil part. Available in the TO-78 7L RoHS and SOIC 8L RoHS package, as well as bare die. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: LS5905 TO-78 7L RoHS LS5906 TO-78 7L RoHS LS5907 TO-78 7L RoHS LS5908 TO-78 7L RoHS LS5909 TO-78 7L RoHS 2N5905 TO-78 7L RoHS 2N5906 TO-78 7L RoHS 2N5907 TO-78 7L RoHS 2N5908 TO-78 7L RoHS 2N5909 TO-78 7L RoHS LS5905 SOIC 8L RoHS LS5906 SOIC 8L RoHS LS5907 SOIC 8L RoHS LS5908 SOIC 8L RoHS LS5909 SOIC 8L RoHS Datasheet Spice Model Application Notes

< Back DFN Sample Kit Overview Now it’s easier than ever to test-drive Linear Systems’ most popular parts in one of the industry’s smallest leadless packages. This kit includes a sampling of discretes in the near chip scale footprint, DFN 8L package. The DFN package is a plastic encapsulated package with a copper lead frame substrate. It offers a thin profile, low weight and good thermal and electrical performance. Electrical contact to the PCB is made by soldering perimeter leads to PCB. There is no die attach pad exposed on the bottom surface of the package, which provides more flexible PCB level circuitry routing and in some cases, more thermal resistance for the heat conduction from PCB to component. In this kit you will receive 3 pieces of each of the following parts: 174 DFN 8L RoHS: P-Channel, Single, JFET Switch 4392 DFN 8L RoHS: Low Noise, N-Channel JFET Switch PAD5 DFN 8L RoHS: Low Leakage, Single, Pico-Amp Diode 589 DFN 8L RoHS: Monolithic Dual, N-Channel JFET 489 DFN 8L RoHS: Low Noise, Low Capacitance, Monolithic Dual, N-Channel JFET 689 DFN 8L RoHS: Low Noise, Low Capacitance, Monolithic Dual, P-Channel JFET 352 DFN 8L RoHS: Tightly Matched, Monolithic Dual, PNP Transistor 312 DFN 8L RoHS: Tightly Matched, Monolithic Dual, NPN Transistor Ordering Information When ordering this kit please use the following part call out: DFN SAMPLE BOX

< Back LSJ689 App Note Introduction The dual monolithic P-channel LSJ689 is the complement to the N-channel LSK489. Both devices feature low offset, low noise and low capacitance. They enable the efficient implementation of fully complementary input stages without many of the device matching requirements when pairs of discrete devices are employed. Used alone, the LSJ689 also enables the implementation of more traditional differential input stages in applications where P-channel devices are preferred. Features of the LJ689 include: Low noise on the order of 2 nV/Hz Low gate-drain capacitance, typically 3pF Low gate leakage current typically 3pA (Vds = 15V, Id = 1mA) Breakdown voltage of 50V o IDSS range of 5-20 mA Typical transconductance of 3mS at Id = 1mA This note covers the full-complementary input stage application for the LSJ689 in combination with the LSK489. Read More

MONOLITHIC DUAL, PNP TRANSISTOR < Back IT130 Series MONOLITHIC DUAL, PNP TRANSISTOR The IT130 Series Monolithic Dual, PNP Transistor is a direct replacement for the Intersil IT130 Series. It is ideal for Small Signal Transistor Amplifier & Switching Applications. It is available the in TO-71 6L RoHS, TO-78 6L RoHS, PDIP 8L ROHS and SOIC 8L RoHS package, as well as bare die. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the st andard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: IT130A TO-71 6L RoHS IT130 TO-71 6L RoHS IT131 TO-71 6L RoHS IT132 TO-71 6L RoHS IT130A TO-78 6L RoHS IT130 TO-78 6L RoHS IT131 TO-78 6L RoHS IT132 TO-78 6L RoHS IT130A PDIP 8L RoHS IT130 PDIP 8L RoHS IT131 PDIP 8L RoHS IT132 PDIP 8L RoHS IT130A SOIC 8L RoHS IT130 SOIC 8L RoHS IT131 SOIC 8L RoHS IT132 SOIC 8L RoHS IT130A Die IT130 Die IT131 Die IT132 Die Datasheet Spice Model Application Notes

< Back 3N163 App Note Introduction Wireless real-time radiation sensors networks offer the general public and those that work in high radiation areas greater protection against radiation hazards. Combined with real-time localized and global heat mapping of radiation levels, these radiation networks will help give government and environmental agencies the ability to understand the radiation landscape and respond quickly to radiation changes before they become life-threatening. Low-cost, low-power and no-power radiation sensors, also known as RADFETs (radiation field effect transistors) or dosimeters, are necessary for the implementation of these networks. The RADFET is unique because it does not need a power source to detect radiation. It is also unique in that it records the amount of actual radiation exposure and, as a non-volatile analog memory device, stores the level of radiation exposure as a change in threshold voltage. RADFETs are relatively simple circuits, consisting of only a PMOS transistor. The LS 3N163 PMOS (P-Channel) MOSFET transistor can be used to design RADFETs to meet different design requirements like cost, sensitivity, linearity, and power. The ability to optimize a RADFET for these different design requirements give network designers the ability to construct wireless radiation sensor networks that can also be optimized for cost and performance on a wide scale. Radiation detector principles PMOS MOSFET radiation detectors work on the principle that electron-hole pairs form when radiation or an ionizing particle strikes the MOSFET. This in turn results in shifts to the threshold voltage and drain current parameters of the MOSFET device. Because the change in threshold voltage with radiation exposure is highly linear in a PMOS device, PMOS devices such as the LS 3N163 are commonly used as a radiation detector. In a typical application, the LS 3N163 is operated in unbiased mode (no-power mode) and exposed to radiation. The change in threshold voltage is then measured and the corresponding radiation exposure level determined. In another application, where higher levels of sensitivity are needed, the LS 3N163 is operated in biased mode (power mode). Read More