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Linear Systems designs and manufactures the highest-performance line of monolithic dual JFETs in the industry. Contact us for a quote! Back 2N/LS5905 Series LOW-LEAKAGE, LOW-DRIFT, MONOLITHIC DUAL, N-CHANNEL JFET AMPLIFIER The 2N/LS5905 Series Low Leakage, Low Drift, Monolithic Dual N-Channel JFET Amplifier features tight matching and low drift over temperature specifications. The series is targeted for use in a wide range of precision instrumentation applications where tight tracking is required. Linear Systems’ version of this part series is a direct, pin-for-pin replacement of the Intersil part. Available in the TO-78 7L RoHS and SOIC 8L RoHS package, as well as bare die. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: LS5905 TO-78 7L RoHS LS5906 TO-78 7L RoHS LS5907 TO-78 7L RoHS LS5908 TO-78 7L RoHS LS5909 TO-78 7L RoHS 2N5905 TO-78 7L RoHS 2N5906 TO-78 7L RoHS 2N5907 TO-78 7L RoHS 2N5908 TO-78 7L RoHS 2N5909 TO-78 7L RoHS LS5905 SOIC 8L RoHS LS5906 SOIC 8L RoHS LS5907 SOIC 8L RoHS LS5908 SOIC 8L RoHS LS5909 SOIC 8L RoHS Datasheet Spice Model Application Notes

< Back 3N163 App Note Introduction Wireless real-time radiation sensors networks offer the general public and those that work in high radiation areas greater protection against radiation hazards. Combined with real-time localized and global heat mapping of radiation levels, these radiation networks will help give government and environmental agencies the ability to understand the radiation landscape and respond quickly to radiation changes before they become life-threatening. Low-cost, low-power and no-power radiation sensors, also known as RADFETs (radiation field effect transistors) or dosimeters, are necessary for the implementation of these networks. The RADFET is unique because it does not need a power source to detect radiation. It is also unique in that it records the amount of actual radiation exposure and, as a non-volatile analog memory device, stores the level of radiation exposure as a change in threshold voltage. RADFETs are relatively simple circuits, consisting of only a PMOS transistor. The LS 3N163 PMOS (P-Channel) MOSFET transistor can be used to design RADFETs to meet different design requirements like cost, sensitivity, linearity, and power. The ability to optimize a RADFET for these different design requirements give network designers the ability to construct wireless radiation sensor networks that can also be optimized for cost and performance on a wide scale. Radiation detector principles PMOS MOSFET radiation detectors work on the principle that electron-hole pairs form when radiation or an ionizing particle strikes the MOSFET. This in turn results in shifts to the threshold voltage and drain current parameters of the MOSFET device. Because the change in threshold voltage with radiation exposure is highly linear in a PMOS device, PMOS devices such as the LS 3N163 are commonly used as a radiation detector. In a typical application, the LS 3N163 is operated in unbiased mode (no-power mode) and exposed to radiation. The change in threshold voltage is then measured and the corresponding radiation exposure level determined. In another application, where higher levels of sensitivity are needed, the LS 3N163 is operated in biased mode (power mode). Read More

N-CHANNEL JFET, VOLTAGE CONTROLLED RESISTOR < Back LS26VNS N-CHANNEL JFET, VOLTAGE CONTROLLED RESISTOR The LS26VNS N-Channel Single JFET voltage controlled resistor has a drain-source resistance that is controlled by a DC bias voltage (VGS) applied to a high impedance gate terminal. Minimum RDS of 14 Ω occurs when VGS = -1.0V. As VGS approaches the pinch-off voltage of -6.0V RDS rapidly increases to the maximum value or RDS = 38 Ω. For the P-Channel version, please see our LS26VPS. Both the N and P-channel parts are made from the same die geometry, making them complimentary. This part is available in the TO-92 3L RoHS, SOT-23 3L RoHS and DFN 8L RoHS package, as well as in die form. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering information Below are the options you have when ordering this part: LS26VNS TO-92 3L RoHS LS26VNS SOT-23 3L RoHS LS26VNS DFN 8L RoHS Datasheet Spice Model Application Notes

CURRENT REGULATING DIODE < Back J500 Series CURRENT REGULATING DIODE The J500 Series Current Regulating Diode is a direct replacement for the Siliconix-Vishay J500 Series. It is ideal for current-limiting and constant-current applications. It is available in the TO-92 2L RoHS package, as well as bare die. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: J500 SOT23 3L RoHS J501 SOT23 3L RoHS J502 SOT23 3L RoHS J503 SOT23 3L RoHS J504 SOT23 3L RoHS J505 SOT23 3L RoHS J506 SOT23 3L RoHS J507 SOT23 3L RoHS J508 SOT23 3L RoHS J509 SOT23 3L RoHS J510 SOT23 3L RoHS J511 SOT23 3L RoHS J500 Die J501 Die J502 Die J503 Die J504 Die J505 Die J506 Die J507 Die J508 Die J509 Die J510 Die J511 Die Datasheet Spice Model Application Notes

Quality At Linear Systems, quality is not just a standard; it's a commitment we uphold at every step of our operations. We are proud to have our quality management system certified to ISO 9001:2015, a testament to our unwavering dedication to excellence. Our commitment to quality is reflected in our rigorous internal audit processes, ensuring that every aspect of our operations meets the highest standards. Through our Continuous Improvement Program (CIP), we continuously review and refine our processes, building on past successes to implement best practices across the board. Our ultimate goal is zero defects, and we achieve this by conducting thorough failure analysis and root cause determination at every stage of development and production. By leveraging cutting-edge quality-analysis tools and methods, we ensure that our products consistently meet and exceed expectations. ISO Certificate

SINGLE, HIGH FREQUENCY, N-CHANNEL JFET AMPLIFIER < Back 2N/PN/SST4416 Series SINGLE, HIGH FREQUENCY, N-CHANNEL JFET AMPLIFIER The 2N/PN/SST4416 Series Single, High Frequency, N-Channel JFET Amplifier is a direct replacement for the Fairchild, NXP, and Siliconix-Vishay equivalent part. It is ideal for High Frequency Applications. Available in the TO-72 4L, TO-92 3L and SOT-23 3L RoHS package, as well as die form. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: 2N4416 TO-72 4L RoHS 2N4416A TO-72 4L RoHS PN4416 TO-92 3L RoHS PN4416A TO-92 3L RoHS SST4416 SOT-23 3L RoHS SST4416A SOT-23 3L RoHS 2N4416 Die 2N4416A Die Datasheet Spice Model Application Notes

SD5000 SERIES QUAD, HIGH SPEED N-CHANNEL, LATERAL DMOS FET SWITCH < Back SD5000 Series SD5000 SERIES QUAD, HIGH SPEED N-CHANNEL, LATERAL DMOS FET SWITCH The SD5000 is a Quad, High Speed N-Channel, Lateral DMOS FET Switch with Zener Diode Protection, ideal for Ultra-High Speed Switching Applications. Linear Systems acquired the Siliconix Lateral DMOS FET Switch Product Line, so our parts are the same maskset, process and are an exact pin-for-pin replacement. This series is available in the PDIP 16L RoHS, SOIC 14L RoHS and S/B DIP 16L RoHS package, as well as bare die. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: SD5000I PDIP 16L RoHS SD5000N PDIP 16L RoHS SD5001N PDIP 16L RoHS SD5400CY SOIC 14L RoHS SD5401CY SOIC 14L RoHS SD5000I S/B DIP 16L RoHS SD5000 Die SD5001 Die SD5400 Die SD5401 Die Datasheet Spice Model Applicaton Notes

SINGLE, HIGH INPUT IMPEDANCE, N-CHANNEL JFET AMPLIFIER < Back LS/PF/SST5301 SINGLE, HIGH INPUT IMPEDANCE, N-CHANNEL JFET AMPLIFIER The LS/PF/SST5301 Single, High Input Impedance, N-Channel JFET Amplifier is a direct replacement for the Fairchild equivalent part. It is ideal for very high input impedance applications. Available in the TO-72 4L, TO-92 3L and SOT-23 3L RoHS package, as well as die form. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: LS5301 TO-72 4L RoHS PN5301 TO-92 3L RoHS SST5301 SOT-23 3L RoHS LS5301 Die Datasheet Spice Model Application Notes

MONOLITHIC DUAL, PICO AMP LOW LEAKAGE DIODES < Back ID100 Series ID100 SERIES MONOLITHIC DUAL, PICO AMP LOW LEAKAGE DIODES The ID100 Series Monolithic Dual, Pico Amp Low Leakage Diodes is a direct replacement for the Intersil part series. It is ideal for Pico Amp, Ultra Low Leakage, Protection Diode Applications. The part series is available in the TO-71 6L RoHS and TO-78 6L RoHS package, as well as in die form. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: ID100 TO-71 6L RoHS ID101 TO-78 6L RoHS ID100 TO-71 6L RoHS ID101 TO-78 6L RoHS Datasheet Spice Model Application Notes

Linear Systems designs and manufactures the highest-performance line of monolithic dual JFETs in the industry. Contact us for a quote! Back 2N5564 Series LOW NOISE, MONOLITHIC DUAL, N-CHANNEL JFET The 2N5564 Series is a Low Noise, Monolithic Dual, N-Channel JFET. These matched pairs of JFETs are mounted in a TO-71 package. The two-chip design reduces parasitics for good performance at high frequency while ensuring extremely tight matching. This series features high breakdown voltage, high gain, and <5 mV offset between the two die. It is a Pin-for-Pin Replacement for Siliconix-Vishay 2N5564 Series, available in the TO-71 6L RoHS package, as well as bare die. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: 2N5564 TO-71 6L RoHS 2N5565 TO-71 6L RoHS 2N5566 TO-71 6L RoHS 2N5564 Die 2N5565 Die 2N5566 Die Datasheet Spice Model Application Notes

< Back LSK489 App Note Introduction For circuits designed to work with high impedance sources, ranging from electrometers to microphone preamplifiers, the use of a low-noise, high-impedance device between the input and the op amp is needed in order to optimize performance. At first glance, one of Linear Systems’ most popular parts, the LSK389 ultra-low-noise dual JFET would appear to be a good choice for such an application. The part’s high input impedance (1 TΩ) and low noise (1 nV/√Hz at 1kHz and 2mA drain current) enables power transfer while adding almost no noise to the signal. But further examination of the LSK389’s specification shows an input capacitance of over 20pF. This will cause intermodulation distortion as the circuit’s input signal increases in frequency if the source impedance is high. This is because the JFET junction capacitances are nonlinear. This will be especially the case where common source amplifier arrangements allow the Miller effect to multiply the effective value of the gate-drain capacitance. Further, the LSK389’s input impedance will fall to a lower value as the frequency increases relative to a part with lower input capacitance. A better design choice is Linear Systems’ new offering, the LSK489. Though the LSK489 has slightly higher noise (1.5 nV/√Hz vs. 1.0 nV/√Hz) its much lower input capacitance of only 4pF means that it will maintain its high input impedance as the frequency of the input signal rises. More importantly, using the lower-capacitance LSK489 will create a circuit that is much less susceptible to intermodulation distortion than one using the LSK389. The LSK489’s lower gate-to-drain capacitance enables more effective, elegant audio circuit designs. The relatively high capacitance of the LSK389 often requires designers to use a cascode circuit to provide the ability to handle higher bandwidths without intermodulation distortion. The cascode does this by eliminating the Miller effect that can multiply the effective gate-drain capacitance and its associated nonlinear effects. However, the cascode adds complexity and noise contributed by the cascode transistors. The LSK489 is an N-channel dual low-noise, low-capacitance, tightly matched monolithic field effect transistor. It features: • 3ms transconductance at 2mA drain current • 1000 GΩ input impedance • 60V breakdown voltage • gate-drain capacitance of only 1.5pF • 4pF input capacitance • 1.5 nV/√Hz noise at 1kHz • best low-noise/low-capacitance combination in the industry • lowest input capacitance per unit gate length in the industry • lowest noise for a given gate length in the industry • tight Vgs matching at operating bias Read More