Wireless real-time radiation sensor networks offer the general public and those that work in high radiation areas greater protection against radiation hazards. Combined with real-time localized and global heat mapping of radiation levels, these radiation networks will help give government and environmental agencies the ability to understand the radiation landscape and respond quickly to radiation changes before they become life-threatening. Low-cost, low-power and no-power radiation sensors, also known as RADFETS (Radiation Field Effect Transistors) or dosimeters, are necessary for the implementation of these networks. The RADFET is unique because it does not need a power source to detect radiation. The RADFET is also unique in that it records the amount of actual radiation exposure. The RADFET, as a non-volatile analog memory device, stores the level of radiation exposure as a change in threshold voltage. RADFET’s are relatively simple circuits, consisting of only a PMOS transistor. The LS 3N163 PMOS transistor can be used to design a RADFETs to meet different design requirements like cost, sensitivity, linearity and power. The ability to optimize a RADFET for these different design requirements give network designers the ability to construct wireless radiation sensor networks that can also be optimized for cost and performance on a wide scale.